Skip to content

DAY2 | ANALOG BASICS

DRAFT | I AM ON HOLIDAYS.


DISCLAIMER :

I AM AWAY FROM THE FABLAB FOR 2 WEEKS. NO HANDS-ON PRACTICES CAN BE DONE AT THE MOMENT !.
I am XENNIAL…I had an analog childhood, I had a digital young adulthood, and I am having a fully digital middle-adulthood…
“X-OR” THE SPACE SHERIFF A “XOR GATE”
Analog Vs Digital

0) (DRAFT) LIVE CLASS-NOTES

0) LIVE CLASS-NOTES UNSORTED AND INCOMPLETE NOTES

##### By Jennifer Volk : Novel Electonics, novel Devices, Understanding of electronics, circuits analysis ##### 1) Electrons and Wires: the water & pipes of Electronics ##### Treating electrons as water and pipes ? Electronics is controling electrons flows. electrons are fundamental particules, they are everywhere, hard to take them away from there atom hosts. In some materials like metals you don't need much of energy to take them away from there hosts. Fields of energy are applied to the whole material (copper, etc) in on direction, towards the right. ##### Electrons flow in a wire. the wider the wire the pressure is the same but the electrons are slowed-down. ##### Volts would be the pressure ##### Current would be the examples ##### To control the flow of electrons we use passive comopnents cause they don't need extra inpuy energy to act. There are 3 passive componants : Resistors (shrinking the wire down), Capacitors completely stop electrons...capacitors have a gap in their middles. Inductors are more comlicated...it's a wire that can coil on itself and can slow down the electrons...Inductence is BLABLA... ##### The electron flow doesn't correspond to the electrons speed. ##### how componants are build ? With special materials. An inductor is a wire wrapped around a magnetic core. ##### If a wire has a higher resistance, the processor speed will be slower. ##### If a wire has higher capacitance, the processor will be slower as well. ##### If a wire has higher inductance, the processor will be slower as well. ##### Resistance is proportional to the length of the wire. ##### Capacitor, the larger the ##### Indictance increases with the length of the wire SLIDE ##### 2) How do these componants affect my power distribution ? ##### In some cases capacitors and inductors are the heroes. ##### Componants associated with power-supply are usually wider. ##### Resistance is needed but is an enemy of energy-efficency. SLIDE ##### 3) What part of my circuit needs power ? ##### Active components ##### Transistors are made of silicon crystal to form a wafer polished and some carbon technics and printing technics are applied. They manufacture transistors with up to Billions of transistors/chip. Lythography is really cool. MISSING SLIDE ##### Transistors have gates that turn ON or OFF the flow of electrons. ON = Electrons can flow. ##### x2 types of transistors that can be manufactured on the same wafer. ##### NMOS (sOURCE = PIN3 | DRAIN PIN1 | GATE = PIN2 | SUBSTRATE = PIN4) source fo energy. Needs to apply an HIGH VOLTAGE. ##### PMOS (sOURCE = PIN3 | DRAIN PIN1 | GATE = PIN2 | SUBSTRATE = PIN4) ##### People started with PMOS in the 60's ##### Metaphor : Transistors's gate is allowing cars to pass on light green lights SLIDE ##### Transistors as AMPLIFIERS. ##### MORSE CODE is at the origin (created with point an dashes) ##### 1's and 0's correspond to HIGH and LOW voltage levels that open and close transistors pathways for electrons ##### With 1s and 0s you can buld logic-gates. ##### The case of the "AND GATE" | A | B | OUT | - | A | B | OUT | - | A | OUT | | - | - | - | - | - | - | - | - | - | - | | *0* | *0* | *0* | | 0 | 1 | 0 | | 1 | 0 | 0 | | 1 | 1 | 1 | SLIDE ##### PULL-UP = being raised to the value of the power supply or being raised to the ground voltage. | A | B | OUT | - | A | B | OUT | - | A | OUT | | - | - | - | - | - | - | - | - | - | - | | 0 | 0 | 0 | | *0* | *1* | *0* | | 1 | 0 | 0 | | 1 | 1 | 1 | SLIDE | A | B | OUT | - | A | B | OUT | - | A | OUT | | - | - | - | - | - | - | - | - | - | - | | 0 | 0 | 0 | | 0 | 1 | 0 | | 1 | 0 | 0 | | *1* | *1* | *1* | SLIDE ##### HOW TO MAKE CIRCUITS : ##### SIMULATE IT ! ##### BREADBOARDS, ETC. ##### ON A PCB (COPPER-CLAD) ##### FABRICATE THE CIRCUIT ! SLIDE ##### HOW TO SIMULATE ? ##### NETLISTING (write a script ofr simulator tool to parse) ##### Schematics capture ##### Simulator options : NgSPICE. LTSPICE, WRSPICE SLIDE ##### DEVICE NETLISTING ACRONYMS SLIDE ##### TRANSISTOR MODEL options SLIDE ##### EXAMPLE NETLIST FOR AND gate ##### ROMAIN TO BREAK THE SLIDE DOWN PER ZONE ! ##### You can also change the circuit ! SLIDE SLIDE ##### FINAL NETLIST components SLIDE ##### FINAL NETLIST components that can be changed SLIDE ##### TO RUN THE NETLIST ? ##### OPEN IN TEXT-EDITOR...SEE SLIDE SLIDE ##### CLOCK distribution ##### This is for synchronization of signals SLIDE ##### SCHMITT triggered ##### Pushing a button might not be a clean signal, it will fluctuate. ##### schmitt trigger smoothes these fluctuations out. SLIDE


“AND” GATE “OR” GATE
1 TRANSISTOR ARE VERY SMALL AND LIGHT SWITCHES
2 They can be TURNED ON or TURNED OFF
3 They work with 0’s and 1’s
4 0 = OFF / 1 = ON
5 These 0s and 1s form a BINARY-SYSTEM
6 These switeches allow computers to store informations
7 Each switch stores just 1 BIT
8 Computer don’t only store information, they process information to turn INPUTS into OUTPUTS
9 LOGIC GATES transform INPUT SIGNALS INTO OUTPUT SIGNALS
10 Computers need to process more that 1 BIT at a time
11 For example, an AND Gate receives 2 INPUTS at a time
12 To switch ON an AND Gate, both INPUTS have to be 1’s (say INPUT A=1 and INPUT B=1) = OUTPUT 1
13 The trutch-tables below show the ON and OFF configurations of the switches
14 For example, an OR Gate also receives 2 INPUTS at a time
15 To switch ON an OR Gate, only one of the INPUTS has to be a 1 (say INPUT A=1 and INPUT B=0 = OUTPUT 1
16 Logic Gates follow simple rules
17 But you can do complex things with logig gate when you combine them
A B OUT Vs A B OUT
0 0 0 Vs 0 0 0
0 1 0 Vs 0 1 1
1 0 0 Vs 1 0 1
1 1 1 Vs 1 1 1



1 SILICON IS NOT A GOOD CONDUCTOR. “IMPURITIES” ARE ADDED TO TURN THE TRANSISTORS AREAS WHERE FLOWS OF ELECTRONS CIRCULATE INTO CONTROLABLE AREAS.
2 TRANSISTOR ARE EITHER A SWITCH, AN AMPLIFIER OR A LOGIC GATE.
3 EXCESS OF ELECTRONS = NMOS
4 DEFICIENCY OF ELECTRONS = PMOS
5 DOPANTS/DOPING TRANSFORMS THE SILICON WAFER FROM A SIMPLE SEMI-CONDUCTOR INTO A COMPLEX NETWORK OF INTERACTIVE REGIONS EACH WITH ITS OWN ELECTRICAL PROPERTIES
6 Transistor wafers require a perfect crystaline structure
7 WIRES ARE THINNER THAN HAIRS (Between 17 μm to 181 μm)
8 Silicon is purified into a crystal, heated at 1420ºC under an Argon atmosphere
9 It comes out from the hoven under the shape of a 200kg and 200MM Diameter stick. Pure at 99.9%.
10 The stick in then cut into wafers of .666MM
11 The cuts leave microscopic marks that are removed by polish with several technics.
12 At the end of this polishing process, the wafers thickness is less than .1NM…
13 Transistors are 200 times smaller than a red blood-cell.
14 A photolithography machine prints billions of transistors/hour.
15 Before the engraving/etching, the wafers are covered with a UV liquid. This part of the process is called PHOTORESIST.
16 The machine emits a laser that crosses the designed plane of a transistor and engraves it on the silicon plates.
17 It’s like a photo.
18 After that, the liquid is removed and the engraving stays on the wafer.
19 AS THEY AREMADE OF MULTIPLE LAYERS ONE ON TOP OF THE OTHERS, wafers are repeatedly processed entirely between 15 and 40 CYCLES.
20 Transistors are literally NANOSKYSCRAPPERS.
21 They result in hundreds of microchips each of which has more than a billion transistors
22 After all these processes, a layer of copper is applied to ensure conductivity and milled-down to the heigh of the transistor leaving only the gaps filled with copper.
23 And they are finally cut into indidual parts that are placed on a substrate and encapsulated.
24 A transistor can be made of between 10 and 100 layers.
25 The most complex layer is the one at the bottom where the transistors are. This layer of transistors is made of hundreds of steps.
26 The upper layers are made of the wires that transport electricity.
27 Silicon droplets are hit x3 times with a laserbeam that flattens them.
28 Pendant le process de photolithography uses disfraction as an advantage to produce the shapes on the wafers. The Rayleigh Equation determisn the size of the lement or there “critical dimensions”.
29 Using shorter and shorter laser-wavelentgh to keep going smaller and smaller, in the 90’s an agreement for the 193NM deep-UV-light standard was concluded between members of the chip-industry. Until 2015. Miniaturization reached its limits at that time and Moore’s Law ceased to apply.
30 To overtake this physical frontier, a japanese researcher thought of using 10NM X-RAYS.
31 10NM Wavelentgh X-RAYS are strong enough to eject the electrons from their atoms, and most materials absorb them these x-rays. But differently than with medical x-rays of 1NM, the 10NM x-rays are still long enough to interact with AIR. This means that AIR absorbs the 10NM x-rays as well. So to make things work, these x-rays should be sent in a vacuum space. The lenses used to concentrate the light because they were also absorbing the light…
32 Underwood and Barby managed to prove that it was possible to mirror x-rays and to use difraction through several materials for precise engraving with x-rays. Kinoshita managed to create an image by curving x-rays.
33 The surface of a common mirror has a granularity of 4000 Si atoms. The silicon wafers had to have a surface granularity of 2.3 Si atoms.
34 From this the principles of Extrem Ultra Violet Lithography were invented. But the technology was designed to send the laserbeam through 8 mirrors which was resulting in an enormous loss of the photons that were sent to engrave the surface of the wafers. On 100 photons at the start of the process, only 4 photons would make it to the the wafers. Going-down to 6 mirrors instead of 8 allowed to go up to 8% of the photons reaching the wafers. It wasn’t enough either. They would need a laserbeam of 100 WATTS. Most companies abandoned the project. The one that kept working on it was ASML.
35 Then they produced a plasma made by a laser to lose less photons in the reflection process.
36 14 Electrons escape their orbit and then comeback to it but reorganized once the laser is switched off. And they produce light. The laser was a 1700Watts laser in a xenon-gas atmosphere, to produce a light of 13.4NM.
37 So ASML came out with THE SOLUTION : An extremely purified tin is melted and pushed through an azote-highly-pressurized microscopic nozzle to be turned into tiny droplets. The nozzle vibrates at high-frequence, dividing the flow of melted tin into microscopic droplets. The droplets come out of the nozzle irregular in shapes and sizes but end-up forming droplets of a similar size with a similar interval between them. Each time, a droplet is hit by the laser light is called a “Plasma event”. They produce 50k droplets/seconde. But they have a very expensive mirror inside the chamber and they cannot afford to let the dirt deposit on its surface so they added low-pressure nitrogen-gas to cool-down and slow-down the tin droplets. But the southands of tin explosions happening in the chamber heats up the nitrogen as well.
38 The small plasma shots create a repetitive shock-wave that propagates in the hydrogen. Scientific publications from Taylor, Von Neumann and Senoy describe the phenomenon. They see these plasma shots as TYPE 1A mini supernovas happening 50k times/sec. This meant that they add to evacuate the nytrogen at 360km/h. They managed to reach 30W with the laser but that increased the heat inside the chamber and misaligned the mirrors…so ZEIS integrated a nervous-system to control mirrors-alignment by adding sensors controlled by a robot inside the optics (nanometer and picoradian precision measurments).
39 Then they decided to hit the tin droplets twice.
40 Then they realized that to clean the mirror/collectors they needed to inject a bit of oxygen as well so thant the machine could run longer without maintenance.
41 They managed to generate a 100W and a 200W laserbeam.
42 The photopithography plate reaches a 20G speed.
43 They are working on a 100k droplets/sec and 500W.
44 x5 Si atoms = 1NM.
45 The machinery/infrastructure is inversely proportional to the end-product : It takes a huge amount of space to create extremely detailed products like transistors.
46 All of this by recreating an artificial sun.

2) (DRAFT) A TANGIBLE REPRESENTATION OF A TRANSISTOR THAT YOU CAN MANIPULATE WITH YOUR HANDS !

This is exactly what I needed.



3) (DRAFT) PEOPLE AND METHODS TO DESIGN AND MAKE OPEN SOURCE TRANSISTORS


4) (DRAFT) ABOUT DESKTOP UV LASERS


The UV laser I just bought for our fablab is an XTOOLS F2 ULTRA. This technology seems to be the one that is the closest to the EUV technology from ASML but it is also of course not even comparable ! With 355NM of wavelength and ≈10 µm precision. Let’s investigate on what could be done with this. I read 193NM somewhere on the documentation…
XTOOLS-F2-ULTRA.jpeg

5) (DRAFT) ABOUT SOFTWARES FOR TRANSISTORS AND CHIPS DESIGN

When we talk about ≈10 µm precision, what software should I use to design at the right scale ?